Vi characteristics of diode

Static Resistance is defined as the resistance offered by a device when connected to a DC supply. Resistance is the property of devices or any element to offer resistance to the flow of current or, in other words, the flow of charge carriers. This resistive property leads to power dissipation; this power consumption is often undesired, like in cases of non-idealities but can also be sometimes beneficial, such as in cases of heat and light generation. In this article, we will discuss the static resistance of a diode. A diode is a two-terminal semiconductor device. We will look into the current-voltage characteristics of a diode and define its static resistance for forwarding and reverse-biased conditions. What is Static Resistance? When connected to a DC supply, the resistance of a device or element is referred to as static resistance. Resistance is given as the ratio of voltage to current. So under DC supply, the resistance of any device would be the voltage drop across it and the current flowing through it. For a device with ‘V voltage across it and I current flowing through it, the resistance is given as- Resistance (R) = Voltage (V) / Current (I) V is the voltage across the device, and I is the current through it. Diode and its VI Characteristics A These non-idealities offer a small (non-zero) resistance in their conducting state and very high (non-infinite) resistance when in a non-conducting state. The diode offers a static resistance when connected in forward and r...

When, P terminal is more positive as compared to N terminal i.e. P-terminal connected to positive terminal of The positive terminal of the battery repels majority carriers, holes, in P-region and negative terminal repels electrons in the N region and pushes them towards the junction. This result in increase in concentration of Reverse Biasing Characteristic of Diode In reverse biasing P- terminal is connected to negative terminal of the Negative terminal of the battery attracts majority carriers, holes, in P-region and positive terminal attracts electrons in the N-region and pull them away from the junction. This result in decrease in concentration of charge carriers near junction and width of depletion region increases. A small amount of diode characteristics graph. For reverse bias diode, Where, V = supply voltage I D = diode current I S = reverse saturation current For forward bias, Where, V T = volt’s equivalent of temperature = KT/Q = T/11600 Q = electronic charge = K = Boltzmann’s constant = N = 1, for Ge = 2, for Si As reverse bias diode characteristics curve. Junction breakdown takes place due to two phenomena. Avalanche Breakdown (for V > 5V) Under very high reverse bias voltage kinetic energy of minority carriers become so large that they knock out electrons from covalent bonds, which in turn knock more electrons and this cycle continues until and unless junction breakdowns. This is known as Zener Effect (for V < 5V) Under reverse bias voltage junction barrier te...

The diode is our first semiconductor device. The diode's distinctive feature is that it conducts current in one direction, but not the other. We won't go into the details of how a diode does this, or how it's made. Fortunately, you don't have to know how to make a diode before using it in a circuit. The black arrow ▶ in the symbol points in the direction of the diode's forward current, i \blueD i i start color #11accd, i, end color #11accd , the direction where current flow happens. The diode's voltage, v \goldD v v start color #e07d10, v, end color #e07d10 , is oriented with the + + + plus sign on the end where forward current comes into the diode. We use the Let's say we place a very small positive voltage, like + 0.2 +0.2 + 0 . 2 plus, 0, point, 2 volts, across a silicon diode. That puts us on the right side of the i i i i - v v v v curve. With this small positive voltage, almost no forward current flows. When the voltage increases up to around 0.6 V 0.6\,\text V 0 . 6 V 0, point, 6, start text, V, end text measurable current starts to flow through the diode in the forward direction. As the voltage moves a little above 0.6 V 0.6\,\text V 0 . 6 V 0, point, 6, start text, V, end text , the current through the diode rises rapidly. The i i i i - v v v v curve is nearly vertical at this point (it tips a little to the right). With a positive voltage on its terminals, we say the diode is forward biased. A diode is forward biased when its voltage is anywhere on the + + + plus v...

Schottky Diode A diode is a two-terminal electronic component that mainly conducts electricity in one direction. As we know, an ideal diode will have zero resistance in one direction, and infinite resistance in the reverse direction. There are many types of diodes, namely light-emitting diodes, Zener diodes, photodiodes, Schottky-diode, avalanche diodes, PN junction diodes, and many more. In this article, let us learn in detail about the Schottky-diode. Table of Contents: • • • • • • • • • What is Schottky Diode? The schottky diode is a type of metal – semiconductor junction diode, which is also known as hot-carrier diode, low voltage diode or schottky barrier diode. The schottky diode is formed by the junction of a semiconductor with a metal. Schottky diode offers fast switching action and has a low forward voltage drop. As we are aware that in a PN junction diode , p-type and n-type are joined together to form a PN junction. Whereas, in a Schottky diode metals like platinum or aluminum are used instead of P type semiconductors. Working of a Schottky Diode • The operation relies on the principle that the electrons in different materials have different potential energy. • N-type semiconductors have higher potential energy than electrons of metals. • When these two are brought into contact, there is a flow of electrons in both directions across the metal-semiconductor interface. • A voltage is applied to the Schottky so that the metal is positive when compared to the sem...

When we think of electronic devices, we often think about how fast these devices operate or how long we can operate the device before recharging the battery. What most people don’t think about is what the components in their electronic devices are made of. While each device differs in its construction, these devices all have one thing in common – electronic circuits with components that contain the chemical elements silicon and germanium. TL;DR (Too Long; Didn't Read) Silicon and germanium are two chemical elements called metalloids. Both silicon and germanium can be combined with other elements called dopants to create solid-state electronic devices, such as diodes, transistors and photoelectric cells. The primary difference between silicon and germanium diodes is the voltage needed for the diode to turn on (or become “forward-biased”). Silicon diodes require 0.7 volts to become forward-biased, whereas germanium diodes require only 0.3 volts to become forward-biased. How to Cause Metalloids to Conduct Electric Currents Germanium and silicon are chemical elements called metalloids. Both elements are brittle and have a metallic luster. Each of these elements has an outer electron shell that contains four electrons; this property of silicon and germanium makes it difficult for either element in its purest form to be a good electrical conductor. One way to cause a metalloid to conduct electric current freely is to heat it up. Adding heat causes the free electrons in a metallo...